Serial access memory

ABSTRACT

The present invention provides a serial access memory low in current consumption, which is capable of restraining an increase in chip size even if memory capacity increases. The serial access memory has a first and a second memory arrays a and b each having memory cells electrically connected to their corresponding bit lines BLia, signal lines CLi provided in common between the memory arrays a and b and electrically connected to their corresponding bit lines BLia through first transfer means Ha and Hb, write registers WRm electrically connected to their corresponding signal lines CLi through a second transfer means F, a write bus WD electrically connected to the write registers WRm through a third transfer means D, an input means L electrically connected to the write bus WD, read registers RRm electrically connected to their corresponding signal lines CLi through a fourth transfer means I, a read bus RD electrically connected to the read registers RRm through a fifth transfer means K, and an input means M electrically connected to the read bus RD.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a serial access memory, andparticularly to transfer means set as paths used when data stored inmemory cells are respectively transferred to read and write registers.

[0002] Each of memory blocks of a serial access memory adopts aconfiguration wherein read registers and write registers arerespectively added to memory cells of a DRAM. The memory capacity ofsuch a memory block is normally taken up or configured in units of 256Kbits or 512 Kbits, for example to ensure an operating margin for eachmemory and reduce the peak of current consumption. Since the serialaccess memory often deals with image data, it needs to have a capacityof a few Mbits. In order to implement it through the use of the abovememory block, the serial access memory is made up of a plurality ofmemory blocks.

[0003] With the recent scale-down technology, the memory cell can beformed greatly in parvo. However, the read registers and write registersare not scaled down in a manner similar to the memory cells. Thus,although the occupied area of each memory cell in a memory block isreduced, the read registers and write registers are not so scaled down.Accordingly, a problem arises in that the serial access memory has notyet been scaled down in chip size as might be expected. Further, sincethe conventional serial access memory comprises the plurality of memoryblocks including the write and read registers, circuits for controllingthe respective registers and transfer means increase in number, thusincreasing current consumption.

SUMMARY OF THE INVENTION

[0004] An object of the present invention is to provide a serial accessmemory low in current consumption, which is capable of restraining anincrease in chip size even if memory capacity increases.

[0005] A serial access memory of the present invention comprises firstand second memory arrays. The first memory array includes first memorycells, first sense amplifiers and pairs of first bit lines connected tothe first memory cells and the first sense amplifiers. The second memoryarray includes second memory cells, second sense amplifiers and secondbit lines connected to the second memory cells and the second senseamplifiers. The serial memory further comprises pairs of column lineseach of which is connected to one of the pairs of first bit lines andone of the pairs of the second bit lines, write registers each of whichis connected to one of the pairs of column lines, a write addressaccessing circuit connected to the write registers for selecting one ofsaid write registers, read registers each of which is connected to oneof the pairs of column lines, a read address accessing circuit connectedto the read registers for selecting one of the read registers, an inputcircuit connected to the write registers, and an output circuitconnected to the write registers.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006] While the specification concludes with claims particularlypointing out and distinctly claiming the subject matter which isregarded as the invention, it is believed that the invention, theobjects and features of the invention and further objects, features andadvantages thereof will be better understood from the followingdescription taken in connection with the accompanying drawings in which:

[0007]FIG. 1 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a first embodimentof the present invention;

[0008]FIG. 2 is a timing chart for describing operating timings for theserial access memory according to the first embodiment of the presentinvention;

[0009]FIG. 3 is a simplified circuit diagram illustrating a circuit of aprincipal part of a serial access memory according to a secondembodiment of the present invention;

[0010]FIG. 4 is a timing chart for describing operating timings for theserial access memory according to the second embodiment of the presentinvention;

[0011]FIG. 5 is a simplified circuit diagram depicting a circuit of aprincipal part of a serial access memory according to a third embodimentof the present invention;

[0012]FIG. 6 is a timing chart for describing operating timings for theserial access memory according to the third embodiment of the presentinvention;

[0013]FIG. 7 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a fourthembodiment of the present invention;

[0014]FIG. 8 is a simplified circuit diagram illustrating a circuit of aprincipal part of a serial access memory according to a fifth embodimentof the present invention;

[0015]FIG. 9 is a simplified circuit diagram depicting a circuit of aprincipal part of a serial access memory according to a sixth embodimentof the present invention;

[0016]FIG. 10 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a seventhembodiment of the present invention; and

[0017]FIG. 11 is a simplified circuit diagram illustrating a circuit ofa principal part of a serial access memory according to an eighthembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Preferred embodiments of the present invention will hereinafterbe described in detail with reference to the accompanying drawings.

[0019]FIG. 1 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a first embodimentof the present invention. A configuration of the first embodiment willbe explained below with reference to FIG. 1.

[0020] The serial access memory according to the present embodimentcomprises two memory blocks (corresponding to a memory block a and amemory block b). The memory blocks a and b have a plurality of memorycells respectively. The memory cells comprise memory cell transistorsCTrija or CTrijb (where i=1 to m, j=1 to n, and m and n are wholenumbers) and capacitors Cija or Cijb respectively. One ends of thecapacitors Cija or Cijb are electrically connected to theircorresponding first terminals of the memory cell transistors CTrija orCTrijb, whereas the other ends thereof are respectively electricallyconnected to a predetermined source or power supply (ground potential inthe first embodiment).

[0021] Second terminals of the memory cell transistors CTrija or CTrijbare respectively electrically connected to bit lines BLia, BLia/, BLibor BLib/, and the gates thereof are respectively electrically connectedto word lines WLja or WLjb.

[0022] As to the memory cell, for example, one connected to a pair ofbit lines BLma and BLma/ is considered as one column unit. Each of senseamplifiers SAia is provided for each column unit. The sense amplifiersSAia or SAib are respectively electrically connected between eachindividual pairs of bit lines BLia and BLia/ or between BLib and BLib/.These memory cells, sense amplifiers SAia or SAib, bit lines BLia,BLia/, BLib or BLib/ and word lines WLja or WLib constitute either amemory cell array Ga or Gb. Incidentally, the word lines WLja or WLjbare electrically connected to either an X address means (an X addressaccessing circuit) Aa or Ab. The X address means Aa (or Ab) selects onlyone word line WLja (or WLjb) from the word lines WLja (or WLjb) inresponse to an unillustrated address signal.

[0023] The bit lines pairs BLia and BLia/ or BLib and BLib/ set incolumn units are electrically connected to their corresponding pairs ofsignal lines CLi and/CLi which are parallel to the bit lines BLia,BLia/, BLib or BLib/ and common to the memory blocks a and b throughtransfer means Ha or Hb. Either the transfer means Ha of the memoryblock a or the transfer means Hb of the memory block k comprisestransfer transistor pairs Tri1 a and Tri2 a or Tri1 b and Tri2 b. Thesetransfer transistors Tri1 a, Tri2 a, Tri1 b or Tri2 b have firstterminals electrically connected to their corresponding bit lines BLia,BLia/, BLib or BLib/, second terminals electrically connected to theircorresponding signal lines CLi and /CLi, and gates respectively commonlysupplied with a transfer signal CTa or CTb.

[0024] Read registers RRi and write registers WRi are respectivelyelectrically connected to both ends of the signal lines CLi and /CLithrough transfer means I and F. The read registers RRi and writeregisters WRi respectively comprise two inverters whose inputs andoutputs are respectively connected to one another. Further, the transfermeans F and I respectively comprise transistor pairs Tri3 and Tri4 orTri5 and Tri6. The transfer transistors Tri3 or Tri4 respectively havefirst terminals electrically connected to their corresponding writeregisters WRi, second terminals electrically connected to theircorresponding signal lines CLi and /CLi, and gates commonly suppliedwith a write transfer signal WT. Further, the transfer transistors Tri5or Tri6 respectively have first terminals electrically connected totheir corresponding read registers RRi, second terminals electricallyconnected to their corresponding signal lines CLi and /CLi, and gatescommonly supplied with a read transfer signal RT.

[0025] The write registers WRi are also respectively electricallyconnected to write data buses WD and /WD through a transfer means D. Thetransfer means D comprises transfer transistor pairs Tri1 and Tri2.First terminals of the transfer transistors Tri1 and Tri2 arerespectively electrically connected to the write registers WRi, secondterminals thereof are respectively electrically connected to the writedata buses WD and A ND, and the gates thereof are respectively commonlysupplied with address signals YWm. The address signals YWm are generatedby a write address means (a write address accessing circuit) B. Thewrite address means B activates only one address signal YWm in responseto an unillustrated address signal. Thus, data on the write data busesWD and M ND are read into the write registers WRi connected to thetransfer transistor pairs Tri1 and Tri2 supplied with the activatedaddress signal YWm, respectively.

[0026] An input means L is electrically connected to the write databuses WD and A ND. The input means L receives data DIN inputted from theoutside therein and outputs it to the write data buses WD and A ND.

[0027] The read registers RRi are also electrically connected to readdata buses RD and /RD through a transfer means K. The transfer means Kcomprises transfer transistor pairs Tri7 and Tri8. First terminals ofthe transfer transistors Tri7 and Tri8 are respectively electricallyconnected to the read registers RRi, second terminals thereof arerespectively electrically connected to the read data buses RD and /RD,and the gates thereof are respectively commonly supplied with addresssignals YRm. The address signals YRm are generated by a read addressmeans (a read address accessing circuit) C. The read address means Cactivates only one address signal YRm in response to an unillustratedaddress signal. Thus, only data stored in the read registers RRiconnected to the transfer transistor pairs Tri7 and Tri8 supplied withthe activated address signal YRm are read into the read data buses RDand /RD, respectively.

[0028] An output means M is electrically connected to the read databuses RD and /RD. The output means M outputs the data outputted to theread data buses RD and /RD to the outside as output data DOUT.

[0029]FIG. 2 is a timing chart for describing timings provided tooperate the serial access memory according to the first embodiment ofthe present invention. The operating timings for the serial accessmemory according to the first embodiment will be explained below usingFIG. 2 according to times t1 through t9 shown in FIG. 2. Incidentally,an actual serial access memory is capable of performing a serial writeoperation and a serial read operation in asynchronous form perfectlyexcept for a data transfer cycle. However, FIG. 2 shows a state in whichserial write and read operations have been performed at different timesto make it easy to understand their description.

[0030]FIG. 2 also shows a state in which only the memory block a is inoperation. It is however needless to say that only the memory block bcan be activated and the memory blocks a and b can be activatedsimultaneously.

[0031] <Time t1>

[0032] The input means L captures data DI1 from input data DIN andtransfers it to the write data buses WD and /WD. The write Y addressmeans B selectively activates an address signal YW1. Thus, the transfertransistors Tr11 and Tr12 of the transfer means D are selectively turnedon so that the write register WR1 is electrically connected to the writedata buses WD and /WD. Accordingly, the data DI1 is written into thewrite register WR1.

[0033] <Time t2>

[0034] The input means L brings data DI2 from the input data DIN andtransfers it to the write data buses WD and /WD. The write Y addressmeans B selectively activates an address signal YW2. Thus, the transfertransistors Tr21 and Tr22 of the transfer means D are selectively turnedon so that the write register WR2 is electrically connected to the writedata buses WD and /WD. Accordingly, the data D12 is written into thewrite register WR2.

[0035] <Time T3>

[0036] The input means L takes in data Dim from the input data DIN andtransfers it to the write data buses WD and /WD. The write Y addressmeans B selectively activates an address signal YWm. Thus, the transfertransistors Trm1 and Trm2 of the transfer means D are selectively turnedon so that the write register WRm is electrically connected to the writedata buses WD and /WD. Accordingly, the data DIm is written into thewrite register WRm.

[0037] <Time t4>

[0038] After the writing of the data into the write registers WRi hasbeen completed, the written data DI1 through DIm are written into thememory array Ga at a time t4.

[0039] At first, the X address means Aa selects the corresponding wordline WL1 a (which is tentatively set as WL1 a for explanation herein)and supplies a signal of a high level to the word line WL1 a. Thus, thememory cell transistor CTri1 a of the corresponding memory cellconnected to the word line WL1 a is turned on, so that the memory cellis brought to a selected state.

[0040] Since the write transfer signal WT is brought to a high levelsimultaneously, the transfer transistors Tri3 and Tri4 are turned on.Thus, the data written into the write registers WRi are temporarilytransferred onto their corresponding signal lines CLi and /CLi throughthe transfer transistors Tri3 and Tri4.

[0041] After the data have fully been transferred to the signal linesCLi and /CLi, the transfer signal CTa is rendered high in level. Thus,the transfer transistors Tri1 a and Tri2 a of the transfer means Ha areturned on so that the signal lines CLi and /CLi are electricallyconnected to their corresponding bit lines BLia and BLia/. Accordingly,the data on the signal lines CLi and /CLi are temporarily transferred tothe bit lines BLia and BLia/. The transferred data are respectivelyamplified by the sense amplifiers SAia and thereafter stored in theircorresponding capacitors Ci1 a of the memory cells (corresponding to thememory cells whose memory cell transistors CTri1 a are kept on)connected to the word line WL1 a.

[0042] This series of operations is called “write transfer”.

[0043] <Time t5>

[0044] At a time t5, the data written into the corresponding memory cellis read out.

[0045] The X address means Aa selects the corresponding word line WL1 a(which is tentatively set as WL1 a for explanation herein) and suppliesa high level signal to the word line WL1 a. Thus, the memory celltransistors CTri1 a of the memory cells connected to the word line WL1 aare turned on so that the data stored in the capacitors Ci1 a of thememory cells are transferred to their corresponding bit lines pairs BLiaand BLia/. The sense amplifiers SAia respectively amplify the data onthe bit line pairs BLia and BLia/.

[0046] <Time t6>

[0047] Since the transfer signal CTa is rendered high in level, thetransfer transistors Tri1 a and Tri2 a of the transfer means Ha areturned on so that the signal lines CLi and /CLi are electricallyconnected to their corresponding bit line pairs BLia and BLia/. Thus,the data on the bit line pairs BLia and BLia/, which have been amplifiedby the sense amplifiers SAia, are temporarily transferred onto thesignal lines CLi and /CLi through the transfer transistors Tri1 aandTri2 a.

[0048] Afterwards, the read transfer signal RT is rendered high inlevel. Thus, the transfer transistors Tri5 and Tri6 of the transfermeans I are turned on so that the signal lines CLi and /CLi areelectrically connected to their corresponding read registers RRi.Accordingly, the data on the signal lines CLi and /CLi are respectivelywritten into the read registers RRi.

[0049] This series of operation is called “read transfer”.

[0050] <Time t7>

[0051] The data transferred from the memory block a to its correspondingread register J are temporarily stored in the read register J accordingto the read transfer operation. Thereafter, the address YR1 of theoutputs produced from the read Y address means C is brought to a highlevel. Thus, the transfer transistors Tr17 and Tr18 are turned on sothat the data stored in the read register RR1 is transferred to the readdata buses RD and /RD. The transferred data is transferred to the outputmeans M from which it is outputted as data DO1 of the output data DOUT.

[0052] <Time t8>

[0053] The address YR2 of the outputs produced from the read Y addressmeans C is brought to a high level. Thus, the transfer transistors Tr27and Tr28 are turned on so that the data stored in the read register RR2is transferred to the read data buses RD and /RD. The transferred datais transferred to the output means M from which it is outputted as dataDO2 of the output data DOUT.

[0054] <Time t9>

[0055] The address YRm of the outputs produced from the read Y addressmeans C is brought to a high level. Thus, the transfer transistors Trm7and Trm8 are turned on so that the data stored in the read register RRmis transferred to the read data buses RD and /RD. The transferred datais transferred to the output means M from which it is outputted as dataDOm of the output data DOUT.

[0056] Since the read and write registers are respectively provided oneby one (by one set) with respect to the plurality of memory blocks inthe serial access memory according to the first embodiment of thepresent invention as described above, a substantial reduction in chipsize can be achieved.

[0057] Further, since the write and read registers can be reduced innumber as compared with the prior art, it is possible to restrain anincrease in the number of peripheral circuits and implement a reductionin power consumption.

[0058]FIG. 3 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a secondembodiment of the present invention. A configuration of the secondembodiment will be explained below with reference to FIG. 3. In FIG. 3,the same portions as those shown in FIG. 1 are identified by the samereference numerals and the description thereof will therefore beomitted.

[0059] The second embodiment is similar to the first embodiment in thatthe serial access memory according to the present embodiment comprisestwo memory blocks a and b. However, transfer control for controllingtransfer means Ha and Hb are respectively performed based on twotransfer signals CT1 a and CT2 a, and CT1 b and CT2 b. The transfersignal CT1 a is supplied to the gates of odd-numbered transfertransistors (e.g., Tr11 a and Tr12 a) of the transfer means, whereas thetransfer signal CT2 a is supplied to the gates of even-numbered transfertransistors (e.g., Tr21 a and Tr22 a) of the transfer means. Similarly,the transfer signal CT1 b is supplied to the gates of odd-numberedtransfer transistors (e.g., Tr11 b and Tr12 b) of the transfer means,whereas the transfer signal CT2 b is supplied to the gates ofeven-numbered transfer transistors (e.g., Tr21 b and Tr22 b) of thetransfer means.

[0060] Read registers RRi and write registers WRi are respectivelyelectrically connected to both ends of odd-numbered signal lines (e.g.,CL1 and /CL1) through transfer means I and F. On the other hand, theread registers and the write registers are respectively disconnectedfrom both ends of even-numbered signal lines (e.g., CL2 and /CL2) andonly the transfer means I and F are respectively connected thereto. Thetransfer means I and F connect the even-numbered signal lines (e.g., CL2and /CL2) to the read registers RRi and the write registers WRirespectively electrically connected to both ends of the odd-numberedsignal lines (e.g., CL1 and /CL1), respectively.

[0061] Of the transfer means F, transfer transistors (e.g., Tr13 andTr14) respectively electrically connected to the odd-numbered signallines (e.g., CL1 and /CL1) are controlled by a first write transfersignal WT1, and transfer transistors (e.g., Tr19 and Tr10) respectivelyelectrically connected to the even-numbered signal lines (e.g., CL2 and/CL2) are controlled by a second write transfer signal WT2. Of thetransfer means I, transfer transistors (e.g., Tr15 and Tr16)respectively electrically connected to the odd-numbered signal lines(e.g., CL1 and /CL1) are controlled by a first read transfer signal RT1,and transfer transistors (e.g., Tr111 and Tr112) respectivelyelectrically connected to the even-numbered signal lines (e.g., CL2 and/CL2) are controlled by a second read transfer signal RT2.

[0062]FIG. 4 is a timing chart for describing timings provided tooperate the serial access memory according to the second embodiment ofthe present invention. The operating timings for the serial accessmemory according to the second embodiment will be explained belowaccording to times t1 through t6 with reference to FIG. 4. Incidentally,FIG. 4 shows operating states for explanation regardless of an actualserial access memory in a manner similar to FIG. 2.

[0063] <Time t1>

[0064] An input means L captures data DI11 from input data DIN andtransfers it to write data buses WD and /WD. A write Y address means Bselectively activates an address signal YW1. Thus, transfer transistorsTr11 and Tr12 of a transfer means D are selectively turned on toelectrically connect the write register WR1 to the write data buses WDand AWD. Accordingly, the data DI11 is written into the write registerWR1.

[0065] <Time t2>

[0066] The input means L brings data DI1 k from the input data DIN andtransfers it to the write data buses WD and /WD. The write Y addressmeans B selectively activates an address signal YWk. Thus, transfertransistors Trk1 and Trk2 of the transfer means D are selectively turnedon to electrically connect the write register WRk to the write databuses WD and /WD. Accordingly, the data DI1 k is written into the writeregister WRk.

[0067] <Time t3>

[0068] After the writing of the data into the write register WRk hasbeen completed, the written data DI11 through DI1 k are written intotheir corresponding memory cells electrically connected to bit linepairs (e.g., BL1 a ad /BL1 a) lying in odd sequences, of a memory arrayGa at a time t3.

[0069] At first, an X address means Aa selects the corresponding wordline WL1 a (tentatively set as WL1 a for explanation herein) andsupplies a signal of a high level to the word line WL1 a. Thus, memorycell transistors CTri1 a of the memory cells connected to the word lineWL1 a are turned on, thus bringing the memory cells to a selected state.

[0070] Since the first write transfer signal WT1 is brought to a highlevel simultaneously, the transfer transistors Tri3 and Tri4 are turnedon. Thus, the data written into the write registers WRi are temporarilytransferred onto their corresponding signal lines CLi and /CLi throughthe transfer transistors Trk3 and Trk4.

[0071] After the data have fully been transferred to the signal linesCLi and /CLi, the transfer signal CT1 a is rendered high in level. Thus,the transfer transistors Tri1 a and Tri2 a of the transfer means Ha areturned on to electrically connect the signal lines CLi and /CLi to theircorresponding bit lines BLia and BLia/. Accordingly, the data on thesignal lines CLi and /CLi are temporarily transferred to the bit linesBLia and BLia/. The transferred data are respectively amplified by senseamplifiers SAia and thereafter stored in their corresponding capacitorsCi1 a of the memory cells (corresponding to the memory cells whosememory cell transistors CTri1 a are kept on) connected to the word lineWL1 a.

[0072] <Time t4>

[0073] The input means L takes in data DI21 from the input data DIN andtransfers it to the write data buses WD and /WD. The write Y addressmeans B selectively activates an address signal YW1. Thus, the transfertransistors Tr11 and Tr12 of the transfer means D are selectively turnedon to electrically connect the write register WR1 to the write databuses WD and /WD. Accordingly, the data DI21 is written into the writeregister WR1.

[0074] <Time t5>

[0075] The input means L takes in data DI2 k from the input data DIN andtransfers it to the write data buses WD and /ND. The write Y addressmeans B selectively activates an address signal YWk. Thus, the transfertransistors Trk1 and Trk2 of the transfer means D are selectively turnedon to electrically connect the write register WRk to the write databuses WD and /WD. Accordingly, the data D12k is written into the writeregister WRk.

[0076] <Time t6>

[0077] After the writing of the data into the write register WRk hasbeen completed, the written data DI21 through DI2 k are written intotheir corresponding memory cells electrically connected to bit linepairs (e.g., BL2 a and /BL2 a) lying in even sequences, of the memoryarray Ga at a time t6.

[0078] At first, the X address means Aa selects the corresponding wordline WL2 a (tentatively set as WL2 a for explanation herein) andsupplies a signal of a high level to the word line WL2 a. Thus, memorycell transistors CTri2 a of the corresponding memory cells connected tothe word line WL2 a are turned on, so that the memory cells are broughtto a selected state.

[0079] Since the second write transfer signal WT2 is brought to a highlevel simultaneously, the transfer transistors (Tr19 and Tr10) areturned on. Thus, the data written into the write registers WRi aretemporarily transferred onto their corresponding signal lines CLi and/CLi through the transfer transistors (e.g., Tr19 and Tr10).

[0080] After the data have fully been transferred to the signal linesCLi and /CLi, the transfer signal CT2 a is rendered high in level. Thus,the transfer transistors Tri1 a and Tri2 a of the transfer means Ha areturned on to electrically connect the signal lines CLi and /CLi to theircorresponding bit lines BLia and BLia/. Accordingly, the data on thesignal lines CLi and /CLi are temporarily transferred to the bit linesBLia and BLia/. The transferred data are respectively amplified by thesense amplifiers SAia and thereafter stored in their correspondingcapacitors Ci1 a of the memory cells (corresponding to the memory cellswhose memory cell transistors CTri1 a are kept on) connected to the wordline WL2 a.

[0081] Incidentally, while only the read operation has been described inthe second embodiment, a write operation can easily be understood if areference is made to the write operation of the first embodiment and theread operation of the second embodiment.

[0082] Since the read and write registers are respectively configured inhalf number in the second embodiment as described above as compared withthe first embodiment, a reduction in chip size, restraint on an increasein the number of peripheral circuits, and low power consumption can beachieved as compared with the first embodiment.

[0083]FIG. 5 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a third embodimentof the present invention. In FIG. 5, the same portions as those shown inFIG. 1 are identified by the same reference numerals and the descriptionthereof will therefore be omitted. A configuration of the thirdembodiment will be explained below with reference to FIG. 5.

[0084] The serial access memory according to the third embodiment is onewherein one read register (one set) is additionally provided to set theread port of the first embodiment to two. Namely, the configuration ofthe serial access memory according to the third embodiment is oneobtained by adding the following configuration to the first embodiment.

[0085] Added read registers RRi′ are respectively electrically connectedto one ends of signal lines CLi and /CLi through an added transfer meansI′ on the connection side of read registers RRi through a transfer meansI. The added read registers RRi′ respectively comprise two inverterswhose input and output are connected to each other, in a manner similarto the read registers RRi. Further, the added transfer means I′ alsocomprises added transistor pairs Tri5′ and Tri6′ in a manner similar tothe transfer means I. The added transfer transistors Tri5′ or Tri6′ havefirst terminals respectively electrically connected to the added readregisters RRi′, second terminals respectively electrically connected tothe signal lines CLi and /CLi, and gates respectively commonly suppliedwith a read transfer signal RT′

[0086] Further, the added read registers RRi′ are also electricallyconnected to added read data buses RD′ and /RD′ through a transfer meansK′. The transfer means K′ comprises added transfer transistor pairsTri7′ and Tri8′. First terminals of the added transfer transistors Tri7′and Tri8′ are respectively electrically connected to the added readregisters RRi′, second terminals thereof are respectively electricallyconnected to the added read data buses RD′ and /RD′, and their gates arerespectively commonly supplied with added address signals YRm′. Theadded address signals YRm′ are generated by an added read address meansC′. The added read address means C′ activates only one added addresssignal YRm′ in response to an unillustrated address signal. Thus, onlydata stored in the added read registers RRi′ connected to the addedtransfer transistor pairs Tri7′ and Tri8′ supplied with the activatedadded address signal YRm′ are read into the added read data buses RD′and /RD′.

[0087] An added output means M′ is electrically connected to the addedread data buses RD′ and /RD′. The added output means M′ outputs the dataoutputted to the added read data buses RD′ and /RD′ to the outside asadded output data DOUT′.

[0088] The operation of the serial access memory according to the thirdembodiment will next be described with reference to FIG. 6. Since theserial access memory according to the third embodiment is similar inwrite operation to the first embodiment, the description thereof will beomitted and only a read operation thereof will be explained.

[0089] <Time t1>

[0090] An X address means Aa selects the corresponding word line WL1 a(which is tentatively set as WL1 a for explanation herein) and suppliesa high level signal to the word line WL1 a. Thus, memory celltransistors CTri1 a of memory cells connected to the word line WL1 a areturned on to transfer data stored in capacitors Ci1 a of the memorycells to their corresponding bit lines pairs BLia and BLia/. Senseamplifiers SAia respectively amplify the data on the bit line pairs BLiaand BLia/.

[0091] <Time t2>

[0092] Since a transfer signal CTa is rendered high in level, transfertransistors Tri1 a and Tri2 a of a transfer means Ha are turned on sothat the signal lines CLi and /CLi are electrically connected to theircorresponding bit line pairs BLia and BLia/. Thus, the data on the bitline pairs BLia and BLia/, which have been amplified by the senseamplifiers SAia, are temporarily transferred onto the signal lines CLiand /CLi through the transfer transistors Tri1 a and Tri2 a.

[0093] Afterwards, a read transfer signal RT is rendered high in level.Thus, transfer transistors Tri5 and Tri6 of the transfer means I areturned on to electrically connect the signal lines CLi and /CLi to theircorresponding read registers RRi. Accordingly, the data on the signallines CLi and /CLi are respectively written into the read registers RRi.This is called a so-called read transfer operation.

[0094] <Time t3>

[0095] An X address means Ab selects the corresponding word line WL1 b(which is tentatively set as WL1 b for explanation herein) and suppliesa high level signal to the word line WL1 b. Thus, memory celltransistors CTri1 b of memory cells connected to the word line WL1 b areturned on so that data stored in capacitors Ci1 b of the memory cellsare transferred to their corresponding bit lines pairs BLib and BLib/.Sense amplifiers SAib respectively amplify the data on the bit linepairs BLib and BLib/.

[0096] <Time t4>

[0097] Since a transfer signal CTb is rendered high in level, transfertransistors Tri1 b and Tri2 b of a transfer means Hb are turned on toelectrically connect the signal lines CLi and /CLi to theircorresponding bit lines BLib and BLib/. Thus, the data on the bit linepairs BLib and BLib/, which have been amplified by the sense amplifiersSAib, are temporarily transferred onto the signal lines CLi and /CLithrough the transfer transistors Tri1 b and Tri2 b.

[0098] Afterwards, the added read transfer signal RT′ is rendered highin level. Thus, the added transfer transistors Tri5′ and Tri6′ of theadded transfer means I′ are turned on so that the signal lines CLi and/CLi are electrically connected to their corresponding added readregisters RRi′. Accordingly, the data on the signal lines CLi and /CLiare respectively written into the added read registers RRi′. Namely,this is called an added read transfer operation.

[0099] <Time t5>

[0100] Data transferred from a memory cell or memory block a to itscorresponding read register J are temporarily stored in the readregister J according to the read transfer operation. Data transferredfrom a memory cell or memory block b to its corresponding added readregister J′ are temporarily stored in the added read register J′.Thereafter, an address YR1 of outputs produced from a read Y addressmeans C is brought to a high level, and an address YR1′ of outputsproduced from the added read Y address means C′ is rendered high inlevel. Thus, transfer transistors Tr17 and Tr18 are turned on so thatthe data stored in the read register RR1 is transferred to thecorresponding read data buses RD and /RD. Further, added transfertransistors Tr17′ and Tr18′ are turned on so that the data stored in theadded read register RR1′ is transferred to the corresponding added readdata buses RD′ and /RD′. The transferred data are transferred to theircorresponding output means M and added output means M′ from which theyare outputted as data DO1 and added data DO1′ of output data DOUT andadded output data DOUT′.

[0101] <Time t6>

[0102] An address YR2 of the outputs produced from the read Y addressmeans C is brought to a high level, and an address YR2′ of the outputsproduced from the added read Y address means C′ is rendered high inlevel. Thus, the transfer transistors Tr17 and Tr18 are turned on sothat the data stored in the read register RR2 is transferred to the readdata buses RD and /RD. Further, the added transfertransistors Tr17′ andTr18′ are turned on so that the data stored in the added read registerRR2′ is transferred to the corresponding added read data buses RD′ and/RD′. The transferred data are transferred to their corresponding outputmeans M and added output means M′ from which they are outputted as dataDO2 and added data DO2′ of the output data DOUT and added output dataDOUT′.

[0103] <Time t7>

[0104] An address YRm of the outputs produced from the read Y addressmeans C is brought to a high level, and a an address YRm′ of the outputsproduced therefrom is rendered high in level. Thus, the transfertransistors Tr17 and Tr18 are turned on so that the data stored in theread register RRm is transferred to the read data buses RD and /RD.Further, the added transfer transistors Tr17′ and Tr18′ are turned on sothat the data stored in the added read register RRm′ is transferred tothe corresponding added read data buses RD′ and /RD′. The transferreddata are transferred to their corresponding output means M and addedoutput means M′ from which they are outputted as data DOm and added dataDOm′ of the output data DOUT and added output data DOUT′.

[0105] The serial access memory according to the third embodiment isdisadvantageous over the first embodiment in both chip size and currentconsumption because the added read registers are additionally providedas compared with the first embodiment. However, the serial access memoryhas the advantage of being capable of simultaneously obtaining outputsfrom the two output means as is understood from FIG. 6.

[0106]FIG. 7 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a fourthembodiment of the present invention. In FIG. 7, the same portions asthose shown in FIG. 1 are identified by the same reference numerals andtheir description will be omitted. A configuration of the fourthembodiment will be explained below with reference to FIG. 7.

[0107] The serial access memory according to the fourth embodiment isequivalent to one wherein the transfer means F and I employed in thefirst embodiment are respectively made up of only one transistor.Namely, in the fourth embodiment, the transfer means F and Irespectively connect a write register E and a read register J to onlyeither of signal lines CLi and /CLi.

[0108] Only points different from the first embodiment will be explainedin the fourth embodiment. The transfer means F and I comprise respectiveone transistors Tri4 and Tri5 respectively. Transfer transistors Tri4have fist terminals electrically connected to their corresponding writeregisters WRi, second terminals electrically connected to theircorresponding signal lines CLi (which may be /CLi although CLi have beenused in the present embodiment), and gates each supplied with a writetransfer signal WT. Further, the transfer transistors Tri5 have firstterminals electrically connected to their corresponding read registersRRi, second terminals electrically connected to their correspondingsignal lines CLi (which may be /CLi although the CLi have been used inthe present embodiment), and gates each supplied with a read transfersignal RT.

[0109] The serial access memory according to the fourth embodiment hasthe possibility that it will become advantageous over the firstembodiment in chip size because the number of transistors is low ascompared with the first embodiment. However, no data is supplied to thesignal lines disconnected from the transfer means F and I. Accordingly,the serial access memory has the potential for an increase in the loadon each sense amplifier and the need for much time.

[0110]FIG. 8 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a fifth embodimentof the present invention. In FIG. 8, the same portions as those shown inFIG. 7 are identified by like reference numerals and their descriptionwill be omitted. A configuration of the fifth embodiment will beexplained below with reference to FIG. 8.

[0111] The serial access memory according to the fifth embodiment isequivalent to one wherein the transfer means Ha and Hb employed in thefourth embodiment are respectively made up of only one transistor, andthe number of signal lines is set to one alone without being set inpairs. Namely, in the fifth embodiment, the transfer means Ha and Hbrespectively connect bit line pairs BLia or /BLia, or BLib or /BLib tosignal lines CLi.

[0112] Only points different from the fourth embodiment will beexplained in the fifth embodiment. The transfer means Ha and Hb compriserespective one transistors Tri2 a and Tri2 b respectively. The transfertransistors Tri2 a have fist terminals electrically connected to theircorresponding bit line pairs BLia (which may be /BLia although BLia havebeen used in the present embodiment), second terminals electricallyconnected to their corresponding signal lines CLi, and gates eachsupplied with a write transfer signal WT. Further, the transfertransistors Tri2 b have first terminals electrically connected to theircorresponding bit line pairs BLib (which may be /BLib although BLib havebeen used in the present embodiment), second terminals electricallyconnected to their corresponding signal lines CLi, and gates eachsupplied with a read transfer signal RT.

[0113] The serial access memory according to the fifth embodiment isadvantageous over the fourth embodiment in chip size because the numberof transistors and the number of signal lines are low as compared withthe fourth embodiment. However, no data is supplied to the bit linesdisconnected from the transfer means Ha and Hb. Accordingly, the serialaccess memory has the potential for an increase in the load on eachsense amplifier and the need for much time.

[0114]FIG. 9 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a sixth embodimentof the present invention. In FIG. 9, the same portions as those shown inFIG. 3 are identified by the same reference numerals and theirdescription will be omitted. A configuration of the sixth embodimentwill be explained below with reference to FIG. 9.

[0115] The serial access memory according to the sixth embodiment has aconfiguration wherein one pair of the signal line pairs CLi and /CLi isprovided for the two pairs of the bit line pairs BLia and /BLia, or thetwo pairs of the bit line pairs BLib and /BLib in the second embodiment.Therefore, transfer means F and I are simply provided in associationwith the signal line pairs CLi and /CLi, and one control signal is usedtherefor in a manner similar to the first embodiment. Transfer means Haand Hb are respectively connected to one pair of the signal line pairsCLi and /CLi common to the two pairs of the bit line pairs BLia and/BLia or BLib and /BLib.

[0116] Only points different from the second embodiment will beexplained in the sixth embodiment.

[0117] The bit line pairs BLia and BLia/ or BLib and BLib/ set in columnunits are electrically connected to their corresponding pairs of signallines CLk and /CLk parallel to the bit line pairs BLia, BLia/, BLib orBLib/ and common to memory blocks a and b through the transfer means Haand Hb. Here, the signal line pairs CLk and /CLk are provided commonlyto the two pairs (e.g., BL1 a and BL1 a/ and BL2 a and BL2 a/, or BL1 band BL1 b/ and BL2 b and BL2 b/) of the bit line pairs.

[0118] The transfer means Ha or Hb comprises transfer transistor pairsTri1 a and Tri2 a or Tri1 b and Tri2 b. The odd-numbered transfertransistor (e.g. ,Tri11 a, Tr12 a, Tri1 b or Tri12 b) has a firstterminal electrically connected to its corresponding bit line (e.g., BL1a, bL1 a/, BL1 b or BL1 b/), a second terminal electrically connected toits corresponding signal line (e.g., CL1, /CL1) and a gate commonlysupplied with a fist transfer signal CT1 a or CT1 b. On the other hand,the even-numbered transfer transistor (e.g., Tr21 a, Tr22 a, Tr21 b orTr22 b) has a first terminal electrically connected to its correspondingbit line (e.g., BL2 a, BL2 a/, BL2 b or BL2 b/), a second terminalelectrically connected to its corresponding signal line (e.g., CL1,/CL1) common to the odd-numbered one, and a gate commonly supplied witha second transfer signal CT2 a or CT2 b.

[0119] Read and write registers RRk and WRk are electrically connectedto their corresponding both ends of the signal lines CLk and /CLkthrough the transfer means I and F. The transfer means F and Irespectively comprise transistor pairs Trk3 and Trk4 or Trk5 and Trk6.The transfer transistor Trk3 or Trk4 has a first terminal electricallyconnected to its corresponding write register WRk, a second terminalelectrically connected to its corresponding signal line CLk or /CLk anda gate commonly supplied with a write transfer signal WT. Further, thetransfer transistor Trk5 or Trk6 has a first terminal electricallyconnected to its corresponding read register RRk, a second terminalelectrically connected to its corresponding signal line CLk or /CLk anda gate commonly supplied with a read transfer signal RT.

[0120] The serial access memory according to the sixth embodiment can bereduced in chip size as compared with the second embodiment because thenumber of the signal line pairs and the number of the transfer means forconnecting the signal line pairs and the read and write registers arelow as compared with the second embodiment.

[0121]FIG. 10 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to a seventhembodiment of the present invention. In FIG. 10, the same portions asthose shown in FIG. 9 are identified by the same reference numerals andtheir description will be omitted. A configuration of the seventhembodiment will be explained below with reference to FIG. 10.

[0122] The serial access memory according to the seventh embodiment isprovided with a dividing means N for separating the memory block a andthe memory block b employed in the sixth embodiment from each other.

[0123] Only points different from the sixth embodiment will be explainedin the seventh embodiment.

[0124] Signal line pairs common to memory blocks a and b employed in theseventh embodiment are divided into signal line pairs CLk and /CLk forthe memory block a and signal line pairs CLk′ and /CLk′ for the memoryblock b. The dividing means N controls connections or non-connectionsbetween the divided signal line pairs. The dividing means N comprisesdividing transistor pairs TrBk and TrBk/. The dividing transistors TrBkrespectively have first terminals electrically connected to theircorresponding signal line pairs CLk, second terminals electricallyconnected to their corresponding signal line pairs CLk′ and gatessupplied with a division signal BS. On the other hand, the dividingtransistors TrBk/ respectively have first terminals electricallyconnected to their corresponding signal lines pairs CLk/, secondterminals electrically connected to their corresponding signal linespairs CLk′/ and gates supplied with the division signal BS. The serialaccess memory according to the seventh embodiment is disadvantageousover the sixth embodiment in a reduction in chip size because thedividing means is additionally provided. However, the serial accessmemory according to the seventh embodiment has the operational merit ofbeing capable of separating the memory block a and the memory block b bythe dividing means to thereby execute a read transfer means and a writetransfer means simultaneously.

[0125]FIG. 11 is a simplified circuit diagram showing a circuit of aprincipal part of a serial access memory according to an eighthembodiment of the present invention. A configuration of the eighthembodiment will be explained below with reference to FIG. 11. In FIG.11, the same portions as those shown in FIG. 1 are identified by thesame reference numerals and their description will be omitted.

[0126] The serial access memory according to the present embodiment usesregisters as read/write registers held in common or shared forwrite/read without exclusively using the registers as in the case of theread register and the write register. Thus, as is understood from acomparison made between FIG. 1 and FIG. 11, the serial access memoryaccording to the eighth embodiment has a configuration in which the readregisters of the serial access memory according to the first embodimentare omitted.

[0127] Only points different from the first embodiment will be explainedin the eighth embodiment. Only write/read registers WRm electricallyconnected to their corresponding one ends of signal line pairs CLi andCLi/ are used as registers employed in the eighth embodiment. Thus, databuses are configured as input/output data buses WRD and WRD/, and aninput/output means L′ handles input data DIN and output data DOUT.

[0128] In the serial access memory according to the eighth embodiment, areduction in chip size can be achieved because the read registers (orwrite registers), transfer means related thereto, buses and output means(or input means) can be omitted as compared with the first embodiment.Since, however, the registers are held in write/read common use in theserial access memory according to the eighth embodiment, the serialaccess memory has the demerit of being unable to asynchronouslysimultaneously perform a write operation and a read operation.

[0129] According to the invention of the present application asdescribed above in detail, a serial access memory low in currentconsumption can be provided which is capable of restraining an increasein chip size even if memory capacity increases.

[0130] While the present invention has been described with reference tothe illustrative embodiments, this description is not intended to beconstrued in a limiting sense. Various modifications of the illustrativeembodiments, as well as other embodiments of the invention, will beapparent to those skilled in the art on reference to this description.It is therefore contemplated that the appended claims will cover anysuch modifications or embodiments as fall within the true scope of theinvention.

What is claimed is:
 1. A serial access memory comprising: a first memoryarray including a plurality of first memory cells, a plurality of firstsense amplifiers and a plurality of pairs of first bit lines connectedto the first memory cells and the first sense amplifiers; a secondmemory array including a plurality of second memory cells, a pluralityof second sense amplifiers and a plurality of pairs of second bit linesconnected to the second memory cells and the second sense amplifiers; aplurality of pairs of column lines each of which is connected to one ofthe pairs of first bit lines and one of the pairs of the second bitlines; a plurality of write registers each of which is connected to oneof the pairs of column lines; a write address accessing circuitconnected to said write registers for selecting one of said writeregisters; a plurality of read registers each of which is connected toone of the pairs of column lines; a read address accessing circuitconnected to said read registers for selecting one of said readregisters; an input circuit connected to said write registers; and anoutput circuit connected to said read registers.
 2. A serial accessmemory according to claim 1, further comprising, a first X addressaccessing circuit connected to the first memory cells in a directionsubstantially perpendicular to the first bit lines, and a second Xaddress accessing circuit connected to the second memory cells in adirection substantially perpendicular to the second bit lines.
 3. Aserial access memory according to claim 1, further comprising, aplurality of additional read registers each of which is connected to oneof the pairs of column lines, an additional read address accessingcircuit connected to said additional read registers for selecting one ofsaid read registers, and an additional output circuit connected to saidadditional read registers.
 4. A serial access memory according to claim1, further comprising, a plurality of first transfer circuits each ofwhich is connected between one of said pairs of column lines and one ofsaid pairs of first bit lines, said first transfer circuits connectingsaid column lines to said first bit lines in response to a first controlsignal, and a plurality of second transfer circuits each of which isconnected between one of said pairs of column lines and one of saidpairs of second bit lines, said second transfer circuits connecting saidcolumn lines to said second bit lines in response to a second controlsignal.
 5. A serial access memory according to claim 1, furthercomprising, a plurality of third transfer circuits each of which isconnected between one of said pairs of column lines and one of said readregisters, said third transfer circuits connecting said column lines tosaid read registers in response to a third control signal, and aplurality of fourth transfer circuits each of which is connected betweenone of said read registers and said output circuit, said fourth transfercircuits connecting said read registers to said output circuit inresponse to a fourth control signal.
 6. A serial access memory accordingto claim 1, further comprising, a plurality of fifth transfer circuitseach of which is connected between one of said pairs of column lines andone of said write registers, said fifth transfer circuits connectingsaid column lines to said write registers in response to a fifth controlsignal, and a plurality of sixth transfer circuits each of which isconnected between one of said write registers and said input circuit,said sixth transfer circuits connecting said write registers to saidoutput circuit in response to a sixth control signal.
 7. A serial accessmemory according to claim 1, wherein one of said read registers isconnected to one column line of one of said pairs of column lines, andone of said write registers is connected to the other column line of oneof said pairs of column lines.
 8. A serial access memory comprising: afirst memory array including a plurality of first memory cells, aplurality of first sense amplifiers and a plurality of first and secondpairs of bit lines connected to the first memory cells and the firstsense amplifiers; a second memory array including a plurality of secondmemory cells, a plurality of second sense amplifiers and a plurality ofthird and fourth pairs of bit lines connected to the second memory cellsand the second sense amplifiers; a plurality of pairs of first columnlines each of which is connected to one of the first pairs of bit linesand one of the third pairs of the bit lines; a plurality of pairs ofsecond column lines each of which is connected to one of the secondpairs of bit lines and one of the fourth pairs of the bit lines; aplurality of write registers; a plurality of first transfer circuitseach of which is connected between one of said first column lines to oneof said write registers, said first transfer circuits connecting thefirst column lines to said write registers in response to a firstcontrol signal; a plurality of second transfer circuits each of which isconnected between one of said second column lines to one of said writeregisters, said second transfer circuits connecting the second columnlines to said write registers in response to a second control signal; awrite address accessing circuit connected to said write registers forselecting one of said write registers; a plurality of read registers; aplurality of third transfer circuits each of which is connected betweenone of said first column lines to one of said read registers, said thirdtransfer circuits connecting the first column lines to said readregisters in response to a third control signal; a plurality of fourthtransfer circuits each of which is connected between one of said secondcolumn lines to one of said read registers, said fourth transfercircuits connecting the second column lines to said read registers inresponse to a fourth control signal; a read address accessing circuitconnected to said read registers for selecting one of said readregisters; an input circuit connected to said write registers; and anoutput circuit connected to said read registers.
 9. A serial accessmemory according to claim 8, further comprising, a first X addressaccessing circuit connected to the first memory cells in a directionsubstantially perpendicular to said first and second pairs of bit lines,and a second X address accessing circuit connected to the second memorycells in a direction substantially perpendicular to said third andfourth pairs of bit lines.
 10. A serial access memory according to claim8, wherein each of said write registers and read registers is locatedbetween one of said first column lines .
 11. A serial access memoryaccording to claim 8, further comprising, a plurality of fifth transfercircuits each of which is connected between one of said pairs of firstcolumn lines and one of said pairs of first bit lines, said fifthtransfer circuits connecting said column lines to said first bit linesin response to a fifth control signal, a plurality of sixth transfercircuits each of which is connected between one of said pairs of firstcolumn lines and one of said pairs of third bit lines, said sixthtransfer circuits connecting said third column lines to said third bitlines in response to a sixth control signal.
 12. A serial access memoryaccording to claim 8, further comprising, a plurality of seventhtransfer circuits each of which is connected between one of said pairsof second column lines and one of said pairs of second bit lines, saidseventh transfer circuits connecting said second column lines to saidsecond bit lines in response to a seventh control signal, a plurality ofeighth transfer circuits each of which is connected between one of saidpairs of second column lines and one of said pairs of fourth bit lines,said eighth transfer circuits connecting said second column lines tosaid fourth bit lines in response to an eighth control signal.
 13. Aserial access memory according to claim 8, further comprising, aplurality of ninth transfer circuits each of which is connected betweenone of said input circuit and one of said write registers, said ninthtransfer circuits connecting said input circuit to said write registersin response to a ninth control signal, and a plurality of tenth transfercircuits each of which is connected between said output circuit and oneof said read registers, said tenth transfer circuits connecting saidoutput circuit to said read registers in response to a tenth controlsignal.
 14. A serial access memory comprising: a first memory arrayincluding a plurality of first memory cells, a plurality of first senseamplifiers and a plurality of first and second pairs of bit linesconnected to the first memory cells and the first sense amplifiers; asecond memory array including a plurality of second memory cells, aplurality of second sense amplifiers and a plurality of third and fourthpairs of bit lines connected to the second memory cells and the secondsense amplifiers; a plurality of pairs of column lines each of which isconnected to one of said first pairs of bit lines, one of said secondpairs of bit lines, one of said third pairs of bit lines and one of saidfourth pairs of bit lines; a plurality of first transfer circuits eachof which is connected between one of said column lines to one of saidfirst pairs of bit lines, said first transfer circuits connecting thecolumn lines to said first pairs of bit lines in response to a firstcontrol signal; a plurality of second transfer circuits each of which isconnected between one of said column lines to one of said second pairsof bit lines, said first transfer circuits connecting the column linesto said second pairs of bit lines in response to a second controlsignal; a plurality of third transfer circuits each of which isconnected between one of said column lines to one of said third pairs ofbit lines, said first transfer circuits connecting the column lines tosaid third pairs of bit lines in response to a third control signal; aplurality of fourth transfer circuits each of which is connected betweenone of said column lines to one of said fourth pairs of bit lines, saidfirst transfer circuits connecting the column lines to said fourth pairsof bit lines in response to a fourth control signal; a plurality ofwrite registers; a write address accessing circuit connected to saidwrite registers for selecting one of said write registers; a pluralityof read registers; a read address accessing circuit connected to saidread registers for selecting one of said read registers; an inputcircuit connected to said write registers; and an output circuitconnected to said read registers.
 15. A serial access memory accordingto claim 14, further comprising, a first X address accessing circuitconnected to the first memory cells in a direction substantiallyperpendicular to the first and second bit lines, and a second X addressaccessing circuit connected to the second memory cells in a directionsubstantially perpendicular to the third and fourth bit lines.
 16. Aserial access memory according to claim 14, wherein each of said writeregisters and read registers is located between one of said pairs ofcolumn lines.
 17. A serial access memory according to claim 14, furthercomprising, a plurality of fifth transfer circuits each of which isconnected between one of said input circuit and one of said writeregisters, said fifth transfer circuits connecting said input circuit tosaid write registers in response to a fifth control signal, and aplurality of sixth transfer circuits each of which is connected betweensaid output circuit and one of said read registers, said sixth transfercircuits connecting said output circuit to said read registers inresponse to a sixth control signal.
 18. A serial access memory accordingto claim 14, further comprising, a plurality of seventh transfercircuits each of which is connected between one of said pairs of columnlines and one of said write registers, said seventh transfer circuitsconnecting said column lines to said write registers in response to aseventh control signal, and a plurality of eighth transfer circuits eachof which is connected between said pairs of column lines and one of saidread registers, said eighth transfer circuits connecting said columnlines to said read registers in response to an eighth control signal.19. A serial access memory according to claim 14, further comprising adivision circuit connected to said column lines, said division circuitelectrically dividing said first memory array from said second memoryarray in response to a divisional signal.